資料載入中.....
|
請使用永久網址來引用或連結此文件:
https://irlib.pccu.edu.tw/handle/987654321/49514
|
| 題名: | Structure and Photoluminescence Properties of Thermally Synthesized V2O5 and Al-Doped V2O5 Nanostructures |
| 作者: | Wang, CC (Wang, Chih-Chiang)
Lu, CL (Lu, Chia-Lun)
Shieu, FS (Shieu, Fuh-Sheng)
Shih, HC (Shih, Han C.) |
| 貢獻者: | 化材系 |
| 關鍵詞: | Al-doped V2O5 nanostructures
photoluminescence
vapor-solid mechanism |
| 日期: | 2021 |
| 上傳時間: | 2021-04-24 14:46:05 (UTC+8) |
| 摘要: | Al-free and Al-doped V2O5 nanostructures were synthesized by a thermal-chemical vapor deposition (CVD) process on Si(100) at 850 degrees C under 1.2 x 10(-1) Torr via a vapor-solid (V-S) mechanism. X-ray diffraction (XRD), Raman, and high-resolution transmission electron microscopy (HRTEM) confirmed a typical orthorhombic V2O5 with the growth direction along [110]-direction of both nanostructures. Metallic Al, rather than Al3+-ion, was detected by X-ray photoelectron spectroscopy (XPS), affected the V2O5 crystallinity. The photoluminescence intensity of V2O5 nanostructure at 1.77 and 1.94 eV decreased with the increasing Al-dopant by about 61.6% and 59.9%, attributing to the metallic Al intercalated between the V2O5-layers and/or filled in the oxygen vacancies, which behaved as electron sinks. Thus the Al-doped V2O5 nanostructure shows the potential applications in smart windows and the electrodic material in a Li-ion battery. |
| 關聯: | MATERIALS 卷冊: 14 期: 2 文獻號碼: 359 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
|
文件中的檔案:
| 檔案 |
描述 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | | 0Kb | HTML | 329 | 檢視/開啟 |
|
在CCUR中所有的資料項目都受到原著作權保護.
|
