文化大學機構典藏 CCUR:Item 987654321/49514
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    题名: Structure and Photoluminescence Properties of Thermally Synthesized V2O5 and Al-Doped V2O5 Nanostructures
    作者: Wang, CC (Wang, Chih-Chiang)
    Lu, CL (Lu, Chia-Lun)
    Shieu, FS (Shieu, Fuh-Sheng)
    Shih, HC (Shih, Han C.)
    贡献者: 化材系
    关键词: Al-doped V2O5 nanostructures
    photoluminescence
    vapor-solid mechanism
    日期: 2021
    上传时间: 2021-04-24 14:46:05 (UTC+8)
    摘要: Al-free and Al-doped V2O5 nanostructures were synthesized by a thermal-chemical vapor deposition (CVD) process on Si(100) at 850 degrees C under 1.2 x 10(-1) Torr via a vapor-solid (V-S) mechanism. X-ray diffraction (XRD), Raman, and high-resolution transmission electron microscopy (HRTEM) confirmed a typical orthorhombic V2O5 with the growth direction along [110]-direction of both nanostructures. Metallic Al, rather than Al3+-ion, was detected by X-ray photoelectron spectroscopy (XPS), affected the V2O5 crystallinity. The photoluminescence intensity of V2O5 nanostructure at 1.77 and 1.94 eV decreased with the increasing Al-dopant by about 61.6% and 59.9%, attributing to the metallic Al intercalated between the V2O5-layers and/or filled in the oxygen vacancies, which behaved as electron sinks. Thus the Al-doped V2O5 nanostructure shows the potential applications in smart windows and the electrodic material in a Li-ion battery.
    關聯: MATERIALS 卷冊: 14 期: 2 文獻號碼: 359
    显示于类别:[化學工程與材料工程學系暨碩士班] 期刊論文

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