Preparation of photosensitive polyimides (PSPIs) and their feasible evaluation for lithographic insulation patterns (LIPs) of integrated circuits (ICs) without negative photoresists

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Title:	Preparation of photosensitive polyimides (PSPIs) and their feasible evaluation for lithographic insulation patterns (LIPs) of integrated circuits (ICs) without negative photoresists
Authors:	Chen, MH (Chen, Meng-Hsin) Lai, CC (Lai, Chiu-Chun) Chen, HL (Chen, Hsin-Lung) Lin, YH (Lin, Yi-Hung) Huang, KY (Huang, Kuan-Yeh) Lin, CH (Lin, Chih-Hsiang) Hsiao, HT (Hsiao, Ho-Ting) Liu, LC (Liu, Lung-Chang) Chen, CM (Chen, Chien-Ming)
Contributors:	紡織系
Keywords:	LIGHT-EMITTING-DIODES NANOIMPRINT LITHOGRAPHY DIELECTRIC-CONSTANT COMPOSITE CONDUCTIVITY INTERFACE AEROGELS CELLS COATINGS GRAPHENE
Date:	2018-12
Issue Date:	2019-01-16 11:16:15 (UTC+8)
Abstract:	A photosensitive polyimide (PSPI) with high glass transition temperature (T-g; 259 degrees C), good inherent viscosity (I.V.; 0.31 dL/g), and superb decomposition temperature (T-d; 368 degrees C) has been manufactured by the appropriate prescription of diamine monomer (i.e. 2,2-bis (3-amino-4- hydroxyphenyl)-hexafluoropropane; APAF), dianhydride monomer (i.e. 4,4'-(4,4'- isopropylidenediphenoxy)bis(phthalic anhydride); BPADA), cyclodehydating agent (i.e. p-xylene), base (i.e. N,N,N-triethylamine; TEA), and photosensitive monomer (i.e. acryloyl chloride; AOC). In order to explore the applying feasibility, we have prepared lithographic insulation pattern resin (LIPR) of integrated circuit (IC) with PSPI (i.e. APAF/BPADA/AOC polyimide), solvent (i.e. N-methyl-2-pyrrolidone; NMP), photoinitiator (i.e. 1-305), crosslinking agent (i.e. CLA-1), co-photoinitiator (i.e. 1-309) as well as coupling agent (i.e. vinyltrimethoxysilane; VTES) and utilized it without negative photoreist by silicon wafer, i-line (wavelength: 365 nm; optical density: 1200 mW/cm(2)), and photomask. Experimental results reveal that labmade LIPR of IC based on PSPI is a promising IC package material with high tensile strength of 106 MPa, excellent adhesion on silicon wafer (i.e. eligible of cross-cut examination), great coefficient of thermal expansion (CTE) of 17.9 ppm/degrees C, low dielectric constant (D-k) of 3.5, high surface electric resistance of 8.3 x 10(11) Omega/sq., low dielectric loss (D-f) of 0.01, moderate hygroscopicity of 2.9% (23 degrees C, 24 h), and low residual stress of 32.0 MPa.
Appears in Collections:	[紡織工程學系] 期刊論文

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