文化大學機構典藏 CCUR:Item 987654321/39346
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    Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/39346


    Title: Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing
    Authors: Yang, YC (Yang, Ya-Chu)
    Yeh, JW (Yeh, Jien-Wei)
    Tsau, CH (Tsau, Chun-Huei)
    Contributors: 化材所
    Keywords: sputtering
    vacuum annealing
    oxide
    thin films
    Date: 2017-10
    Issue Date: 2018-01-25 14:20:14 (UTC+8)
    Abstract: This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1) thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic) structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 degrees C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 degrees C.
    Relation: MATERIALS 卷: 10 期: 10 文獻號碼: 1141
    Appears in Collections:[Department of Chemical & Materials Engineering] journal articles

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