| 摘要: | 在本論文中，針對難以被蝕刻的N-type矽晶片進行多孔矽的研究。多孔矽已被廣泛研究，但大部分都只針對P-type矽晶片做研究，主要原因為N-type矽晶片比P-type矽晶片所含電洞數較少，所以較不易被蝕刻。
本論文中，主要利用霍爾效應理論來強化N-type矽晶片的蝕刻，為了執行霍爾效應，必須先設計一個新的氧化蝕刻槽，使N-type矽晶片在上下電場蝕刻進行時，能夠同步施加X方向電流I，以及Z方向的磁場B，讓N-type矽晶片之電子往基板聚集，使表面層反轉成P型進行多孔矽之蝕刻。
最後藉由改變磁場大小，使在表面上產生之不規則孔洞和柱狀結構，得以控制。
In this thesis, the researches focus on the study of the difficult etched porous silicon. Porous has been extensive researched, but the majority study is based on the P-type silicon only, the main reason is that the N-type silicon has less electric holes than the P-type silicon. Therefore, the N-type silicon is more difficult to be etched.
The thesis emphasized the used of Hall-effect theory to strengthen the etching of N-type silicon. In order to carry out Hall-effect, the first thing is to design a new tank that can etch trough to oxidizing. This is to make N-type silicon etched at upper and lower electric fields that can exert direction electric current I of X in step, and magnetic field B of Z direction, then let the electron of N-type silicon assemble to the base plate. Then to make the surface layer change into the P-type and carry on the etching of the porous silicon instead.
Finally, by changing the size of magnetic field, the irregular pores and pillars occur on the surface of the N-type silicon. Therefore, the pores and the pillars can be controlled. |
