以霍爾效應強化n型多孔矽之製程

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题名:	以霍爾效應強化n型多孔矽之製程 An enhancement method of n-type porous silicon fabrication by Hall effect
作者:	李博文
贡献者:	材料科學與奈米科技研究所
关键词:	多孔矽霍爾效應 N-type矽晶片 Porous Hall effect N-type silicon
日期:	2006
上传时间:	2014-06-10 16:32:17 (UTC+8)
摘要:	在本論文中，針對難以被蝕刻的N-type矽晶片進行多孔矽的研究。多孔矽已被廣泛研究，但大部分都只針對P-type矽晶片做研究，主要原因為N-type矽晶片比P-type矽晶片所含電洞數較少，所以較不易被蝕刻。本論文中，主要利用霍爾效應理論來強化N-type矽晶片的蝕刻，為了執行霍爾效應，必須先設計一個新的氧化蝕刻槽，使N-type矽晶片在上下電場蝕刻進行時，能夠同步施加X方向電流I，以及Z方向的磁場B，讓N-type矽晶片之電子往基板聚集，使表面層反轉成P型進行多孔矽之蝕刻。最後藉由改變磁場大小，使在表面上產生之不規則孔洞和柱狀結構，得以控制。 In this thesis, the researches focus on the study of the difficult etched porous silicon. Porous has been extensive researched, but the majority study is based on the P-type silicon only, the main reason is that the N-type silicon has less electric holes than the P-type silicon. Therefore, the N-type silicon is more difficult to be etched. The thesis emphasized the used of Hall-effect theory to strengthen the etching of N-type silicon. In order to carry out Hall-effect, the first thing is to design a new tank that can etch trough to oxidizing. This is to make N-type silicon etched at upper and lower electric fields that can exert direction electric current I of X in step, and magnetic field B of Z direction, then let the electron of N-type silicon assemble to the base plate. Then to make the surface layer change into the P-type and carry on the etching of the porous silicon instead. Finally, by changing the size of magnetic field, the irregular pores and pillars occur on the surface of the N-type silicon. Therefore, the pores and the pillars can be controlled.
显示于类别:	[化學工程與材料工程學系暨碩士班] 博碩士論文

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