| 題名: | Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction |
| 作者: | Lin, Jia-Chuan;Chen, Wei-Lun;Tsai, Wei-Chih |
| 貢獻者: | 材料所 |
| 日期: | 2006 |
| 上傳時間: | 2009-11-16 12:11:44 (UTC+8) |
| 摘要: | A new approach for the fabrication of n-type porous silicon layer is proposed. A hole-rich p-layer is arranged underneath the n-layer, and the np-junction is under forward biased condition in the etching process. Therefore sufficient holes can drift straight-upward and pass across the np-junction from p-region to n-region to participate in electrochemical reaction during the etching process with an unfailing supply. Illumination is an optional hole-supplier in this approach, so the problem of illumination-depth limitation can be overcome. Strong visible photoluminescence emissions are demonstrated on the hole-poor n-type porous layer at about 650 nm. (c) 2006 Optical Society of America |
| 關聯: | OPTICS EXPRESS Volume: 14 Issue: 21 Pages: 9764-9769 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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