Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction

CCUR > College of Natural Science and Engineering > College of Engineering > Department of Chemical & Materials Engineering > journal articles > Item 987654321/2741

請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/2741

題名:	Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction
作者:	Lin, Jia-Chuan;Chen, Wei-Lun;Tsai, Wei-Chih
貢獻者:	材料所
日期:	2006
上傳時間:	2009-11-16 12:11:44 (UTC+8)
摘要:	A new approach for the fabrication of n-type porous silicon layer is proposed. A hole-rich p-layer is arranged underneath the n-layer, and the np-junction is under forward biased condition in the etching process. Therefore sufficient holes can drift straight-upward and pass across the np-junction from p-region to n-region to participate in electrochemical reaction during the etching process with an unfailing supply. Illumination is an optional hole-supplier in this approach, so the problem of illumination-depth limitation can be overcome. Strong visible photoluminescence emissions are demonstrated on the hole-poor n-type porous layer at about 650 nm. (c) 2006 Optical Society of America
關聯:	OPTICS EXPRESS Volume: 14 Issue: 21 Pages: 9764-9769
顯示於類別:	[Department of Chemical & Materials Engineering] journal articles

文件中的檔案:

沒有與此文件相關的檔案.

在CCUR中所有的資料項目都受到原著作權保護.