| 題名: | The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization |
| 作者: | Lin, Jia-Chuan
Tsai, Wei-Chih
Lee, Po-Wen |
| 貢獻者: | 材料所 |
| 關鍵詞: | porous silicon
hall effect
Si tips
photoluminescence
electrochemical anodization |
| 日期: | 2007 |
| 上傳時間: | 2009-11-13 15:27:30 (UTC+8) |
| 摘要: | In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS. (c) 2006 Elsevier B.V. All rights reserved. |
| 關聯: | ELECTROCHEMISTRY COMMUNICATIONS Volume: 9 Issue: 3 Pages: 449-453 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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