The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

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Title:	The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization
Authors:	Lin, Jia-Chuan Tsai, Wei-Chih Lee, Po-Wen
Contributors:	材料所
Keywords:	porous silicon hall effect Si tips photoluminescence electrochemical anodization
Date:	2007
Issue Date:	2009-11-13 15:27:30 (UTC+8)
Abstract:	In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS. (c) 2006 Elsevier B.V. All rights reserved.
Relation:	ELECTROCHEMISTRY COMMUNICATIONS Volume: 9 Issue: 3 Pages: 449-453
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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