Formation and simulation of a thermally stable NiSiFUSI gate electrode by a novel integration process

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 電機工程系 > 期刊論文 > Item 987654321/2626

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/2626

题名:	Formation and simulation of a thermally stable NiSiFUSI gate electrode by a novel integration process
作者:	Tan, S. Y. Chiu, Hsien-Chia Chen, Yi-Yang Sung, C. L.
贡献者:	電機系
关键词:	FULLY SILICIDED GATES 45 NM CMOS NI-SILICIDE TECHNOLOGIES
日期:	2008
上传时间:	2009-11-10 09:47:10 (UTC+8)
摘要:	The low resistivity nickel fully silicided (FUSI) gate have received increasing attention over the past several years due to the simply integration scheme for implementation and ease of passivation of the underlying gate dielectric for sub-65 nm/45 nm CMOS devices. A mixed-phase of nickel silicide layer was commonly observed during phase transformation. In order to obtain a thermally stable Ni-FUSI gate electrode, we developed a unique integration process to achieve NiSi phase stabilize at temperature 900 C and delay the agglomeration of NiSi. For the first time, we established an effective way to identify the phase transformations by some nondestructive techniques such as X-ray diffraction, sheet resistance measurement and AFM analysis. The correlations between its electrical and morphological changes during Ni-Si phase transformation were presented. F-incorporation demonstrated some improvements in both morphology and phase stability of the NiSi films at high processing temperatures. Furthermore, modeling the effect of dopants in NiSi on nano-sizes MOSFETs devices was implemented by ISE-TCAD. A low threshold voltage can be tuned by pre-doping the poly-Si with Sb for sub-45 nm NFET devices.
關聯:	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 19 Issue: 5 Pages: 411-417
显示于类别:	[電機工程系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	Text	761	检视/开启

在CCUR中所有的数据项都受到原著作权保护.

数据加载中.....