Study the Raman Spectra and Dielectric Properties of Hexagonal BaTi1-xGaxO3 Ceramics

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/24301

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/24301

题名:	Study the Raman Spectra and Dielectric Properties of Hexagonal BaTi1-xGaxO3 Ceramics
作者:	Lei, CM (Lei, Chien-Ming)
贡献者:	Dept Chem & Mat Engn
关键词:	Solid state reaction method dielectric properties raman spectra BaTiO3 titanates
日期:	2012
上传时间:	2013-02-25 14:15:07 (UTC+8)
摘要:	A series of polycrystalline Ga-doped Barium titanate (BaTi1-xGaxO3) were synthesized for the studies on the dopant-concentration dependence of Raman spectra and dielectric properties. The Qxf value of Ga-doping samples increases up to about 20% of Ga concentration, but the dielectric constant (K-value) decreases while the A(1g) phonon mode (636 cm(-1)) experiences an increasing red-shift. The phonon mode becomes soft with Ga-ion increasing, and the FWHM of Raman peak increases with Ga-ion increasing until tetragonal structure appeared. The effective ionic weight, ionic radii and Coulomb interaction are important influences, which induce the chemical pressure and reduce the excess charge in Ti-site in the Ga-doping h-BaTiO3 system. The relation between Raman mode shifter and K-value, and the correlation of the Qxf value and the FWHM of related phonon vibrations have been reported and examined.
關聯:	FERROELECTRICS 卷: 435 頁數: 129-136
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	321	检视/开启

检视Licence

在CCUR中所有的数据项都受到原著作权保护.