文化大學機構典藏 CCUR:Item 987654321/24301
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    Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/24301


    Title: Study the Raman Spectra and Dielectric Properties of Hexagonal BaTi1-xGaxO3 Ceramics
    Authors: Lei, CM (Lei, Chien-Ming)
    Contributors: Dept Chem & Mat Engn
    Keywords: Solid state reaction method
    dielectric properties
    raman spectra
    BaTiO3
    titanates
    Date: 2012
    Issue Date: 2013-02-25 14:15:07 (UTC+8)
    Abstract: A series of polycrystalline Ga-doped Barium titanate (BaTi1-xGaxO3) were synthesized for the studies on the dopant-concentration dependence of Raman spectra and dielectric properties. The Qxf value of Ga-doping samples increases up to about 20% of Ga concentration, but the dielectric constant (K-value) decreases while the A(1g) phonon mode (636 cm(-1)) experiences an increasing red-shift. The phonon mode becomes soft with Ga-ion increasing, and the FWHM of Raman peak increases with Ga-ion increasing until tetragonal structure appeared. The effective ionic weight, ionic radii and Coulomb interaction are important influences, which induce the chemical pressure and reduce the excess charge in Ti-site in the Ga-doping h-BaTiO3 system. The relation between Raman mode shifter and K-value, and the correlation of the Qxf value and the FWHM of related phonon vibrations have been reported and examined.
    Relation: FERROELECTRICS 卷: 435 頁數: 129-136
    Appears in Collections:[Department of Chemical & Materials Engineering] journal articles

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