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| 題名: | Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films |
| 作者: | Tsay, CY (Tsay, Chien-Yie)
Fan, KS (Fan, Kai-Shiung)
Lei, CM (Lei, Chien-Ming) |
| 貢獻者: | Dept Chem & Mat Engn |
| 關鍵詞: | Transparent oxide semiconductor
GZO thin films
Sol-gel method
X-ray photoelectron spectroscopy
Photoluminescence |
| 日期: | 2012-01 |
| 上傳時間: | 2013-02-25 10:51:31 (UTC+8) |
| 摘要: | Gallium-doped ZnO (GZO) semiconductor thin films were prepared by a sol-gel spin coating process. The effects of Ga dopant concentrations on the microstructure, electrical resistivity, optical properties, and photoluminescence (PL) were studied. XRD results showed that all the as-prepared GZO films had a wurtzite phase and a preferred orientation along the [0 0 2] direction. ZnO thin films doped with Ga had lower electrical resistivity, lower RMS roughness, and improved optical transmittance in the visible region. The lowest average electrical resistivity value, 2.8 x 10(2) Omega cm, was achieved in the ZnO thin films doped with 2% Ga, which exhibited an average transmittance of 91.5%. This study also found that the optical band gap of Ga-doped films was 3.25 eV, slightly higher than that of undoped samples (3.23 eV), and the PL spectra of GZO films showed strong violet-light emission centers at about 2.86 eV (the corresponding wavelength of which is about 434 nm). (C) 2011 Elsevier B.V. All rights reserved |
| 關聯: | JOURNAL OF ALLOYS AND COMPOUNDS 卷: 512 期: 1 頁數: 216-222 |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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