Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/24290

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题名:	Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films
作者:	Tsay, CY (Tsay, Chien-Yie) Fan, KS (Fan, Kai-Shiung) Lei, CM (Lei, Chien-Ming)
贡献者:	Dept Chem & Mat Engn
关键词:	Transparent oxide semiconductor GZO thin films Sol-gel method X-ray photoelectron spectroscopy Photoluminescence
日期:	2012-01
上传时间:	2013-02-25 10:51:31 (UTC+8)
摘要:	Gallium-doped ZnO (GZO) semiconductor thin films were prepared by a sol-gel spin coating process. The effects of Ga dopant concentrations on the microstructure, electrical resistivity, optical properties, and photoluminescence (PL) were studied. XRD results showed that all the as-prepared GZO films had a wurtzite phase and a preferred orientation along the [0 0 2] direction. ZnO thin films doped with Ga had lower electrical resistivity, lower RMS roughness, and improved optical transmittance in the visible region. The lowest average electrical resistivity value, 2.8 x 10(2) Omega cm, was achieved in the ZnO thin films doped with 2% Ga, which exhibited an average transmittance of 91.5%. This study also found that the optical band gap of Ga-doped films was 3.25 eV, slightly higher than that of undoped samples (3.23 eV), and the PL spectra of GZO films showed strong violet-light emission centers at about 2.86 eV (the corresponding wavelength of which is about 434 nm). (C) 2011 Elsevier B.V. All rights reserved
關聯:	JOURNAL OF ALLOYS AND COMPOUNDS 卷: 512 期: 1 頁數: 216-222
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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