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    請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/24143


    題名: Atomic Layer Deposition of Zinc Oxide on Multiwalled Carbon Nanotubes for UV Photodetector Applications
    作者: Lin, YH (Lin, Yu-Hung)
    Lee, PS (Lee, Po-Sheng)
    Hsueh, YC (Hsueh, Yang-Chih)
    Pan, KY (Pan, Ko-Ying)
    Kei, CC (Kei, Chi-Chung)
    Chan, MH (Chan, Ming-Hui)
    Wu, JM (Wu, Jyh-Ming)
    Perng, TP (Perng, Tsong-Pyng)
    Shih, HC (Shih, Han C.)
    貢獻者: Inst Mat Sci & Nanotechnol
    關鍵詞: ZNO NANOWIRE TRANSISTORS
    THIN-FILM TRANSISTORS
    ROOM-TEMPERATURE
    SENSING CHARACTERISTICS
    GATE DIELECTRICS
    FABRICATION
    EMISSION
    EPITAXY
    SNO2
    HETEROJUNCTION
    日期: 2011
    上傳時間: 2013-02-18 13:24:33 (UTC+8)
    摘要: A novel process for the fabrication of ZnO-carbon nanotubes (CNT) nanocomposites with high uniformity by atomic layer deposition (ALD) of ZnO on multiwalled carbon nanotubes was reported, and their applications in UV photodetectors were investigated. Two types of photodetectors, p-and n-type, were developed by alternating the ALD reaction cycles. In addition, a schematic model was proposed to explain the p-to n-type conversion of the ZnO-CNTs, which accounts for the amount and surface coverage of ZnO on CNTs. (C) 2010 The Electrochemical Society. All rights reserved.
    關聯: JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 2 頁數: K24-K27
    顯示於類別:[化學工程與材料工程學系暨碩士班] 期刊論文

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