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https://irlib.pccu.edu.tw/handle/987654321/24143
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題名: | Atomic Layer Deposition of Zinc Oxide on Multiwalled Carbon Nanotubes for UV Photodetector Applications |
作者: | Lin, YH (Lin, Yu-Hung) Lee, PS (Lee, Po-Sheng) Hsueh, YC (Hsueh, Yang-Chih) Pan, KY (Pan, Ko-Ying) Kei, CC (Kei, Chi-Chung) Chan, MH (Chan, Ming-Hui) Wu, JM (Wu, Jyh-Ming) Perng, TP (Perng, Tsong-Pyng) Shih, HC (Shih, Han C.) |
貢獻者: | Inst Mat Sci & Nanotechnol |
關鍵詞: | ZNO NANOWIRE TRANSISTORS THIN-FILM TRANSISTORS ROOM-TEMPERATURE SENSING CHARACTERISTICS GATE DIELECTRICS FABRICATION EMISSION EPITAXY SNO2 HETEROJUNCTION |
日期: | 2011 |
上傳時間: | 2013-02-18 13:24:33 (UTC+8) |
摘要: | A novel process for the fabrication of ZnO-carbon nanotubes (CNT) nanocomposites with high uniformity by atomic layer deposition (ALD) of ZnO on multiwalled carbon nanotubes was reported, and their applications in UV photodetectors were investigated. Two types of photodetectors, p-and n-type, were developed by alternating the ALD reaction cycles. In addition, a schematic model was proposed to explain the p-to n-type conversion of the ZnO-CNTs, which accounts for the amount and surface coverage of ZnO on CNTs. (C) 2010 The Electrochemical Society. All rights reserved. |
關聯: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 2 頁數: K24-K27 |
顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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