Atomic Layer Deposition of Zinc Oxide on Multiwalled Carbon Nanotubes for UV Photodetector Applications

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题名:	Atomic Layer Deposition of Zinc Oxide on Multiwalled Carbon Nanotubes for UV Photodetector Applications
作者:	Lin, YH (Lin, Yu-Hung) Lee, PS (Lee, Po-Sheng) Hsueh, YC (Hsueh, Yang-Chih) Pan, KY (Pan, Ko-Ying) Kei, CC (Kei, Chi-Chung) Chan, MH (Chan, Ming-Hui) Wu, JM (Wu, Jyh-Ming) Perng, TP (Perng, Tsong-Pyng) Shih, HC (Shih, Han C.)
贡献者:	Inst Mat Sci & Nanotechnol
关键词:	ZNO NANOWIRE TRANSISTORS THIN-FILM TRANSISTORS ROOM-TEMPERATURE SENSING CHARACTERISTICS GATE DIELECTRICS FABRICATION EMISSION EPITAXY SNO2 HETEROJUNCTION
日期:	2011
上传时间:	2013-02-18 13:24:33 (UTC+8)
摘要:	A novel process for the fabrication of ZnO-carbon nanotubes (CNT) nanocomposites with high uniformity by atomic layer deposition (ALD) of ZnO on multiwalled carbon nanotubes was reported, and their applications in UV photodetectors were investigated. Two types of photodetectors, p-and n-type, were developed by alternating the ALD reaction cycles. In addition, a schematic model was proposed to explain the p-to n-type conversion of the ZnO-CNTs, which accounts for the amount and surface coverage of ZnO on CNTs. (C) 2010 The Electrochemical Society. All rights reserved.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 2 頁數: K24-K27
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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