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| 題名: | Organic spin valves with inelastic tunneling characteristics |
| 作者: | Li, KS (Li, Kai-Shin)1
Chang, YM (Chang, Yin-Ming)
Agilan, S (Agilan, Santhanam)
Hong, JY (Hong, Jhen-Yong)
Tai, JC (Tai, Jung-Chi)
Chiang, WC (Chiang, Wen-Chung)
Fukutani, K (Fukutani, Keisuke)
Dowben, PA (Dowben, P.A.)
Lin, MT (Lin, Minn-Tsong) |
| 貢獻者: | Dept Phys |
| 關鍵詞: | GIANT MAGNETORESISTANCE
JUNCTIONS
SEMICONDUCTOR
INTERFACE
CONDUCTANCE
INJECTION |
| 日期: | 2011-05-18 |
| 上傳時間: | 2013-01-18 10:54:05 (UTC+8) |
| 摘要: | Electrons may experience inelastic coupling with the organic spacer layer during tunneling between two ferromagnetic electrodes. To probe the transport behavior of spin-polarized electrons in organic materials, organic spin valves were fabricated utilizing a relatively thin organic barrier of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) dusted with alumina at the organic/ferromagnetic interfaces. These structures, with an organic barrier layer, exhibited magnetoresistance up to 12% at room temperature. In studies of the inelastic tunneling spectrum, the observed characteristic peak of the organic layer provides direct evidence of the interplay between the spin-polarized electrons and the organic molecules. Combining the inelastic tunneling results with a simple molecular vibration calculation yields further information on the configuration of the molecular thin film and the possible tunneling states of the spin-polarized electrons. Such interplay indicates a true transport of spin-polarized electrons through organic material rather than through defects or interdiffusion compounds formed at the interfaces within the organic spin valve. |
| 關聯: | PHYSICAL REVIEW B Volume: 83 Issue: 17 Article Number: 172404 |
| 顯示於類別: | [光電物理系] 期刊論文
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