Organic spin valves with inelastic tunneling characteristics

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Title:	Organic spin valves with inelastic tunneling characteristics
Authors:	Li, KS (Li, Kai-Shin)1 Chang, YM (Chang, Yin-Ming) Agilan, S (Agilan, Santhanam) Hong, JY (Hong, Jhen-Yong) Tai, JC (Tai, Jung-Chi) Chiang, WC (Chiang, Wen-Chung) Fukutani, K (Fukutani, Keisuke) Dowben, PA (Dowben, P.A.) Lin, MT (Lin, Minn-Tsong)
Contributors:	Dept Phys
Keywords:	GIANT MAGNETORESISTANCE JUNCTIONS SEMICONDUCTOR INTERFACE CONDUCTANCE INJECTION
Date:	2011-05-18
Issue Date:	2013-01-18 10:54:05 (UTC+8)
Abstract:	Electrons may experience inelastic coupling with the organic spacer layer during tunneling between two ferromagnetic electrodes. To probe the transport behavior of spin-polarized electrons in organic materials, organic spin valves were fabricated utilizing a relatively thin organic barrier of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) dusted with alumina at the organic/ferromagnetic interfaces. These structures, with an organic barrier layer, exhibited magnetoresistance up to 12% at room temperature. In studies of the inelastic tunneling spectrum, the observed characteristic peak of the organic layer provides direct evidence of the interplay between the spin-polarized electrons and the organic molecules. Combining the inelastic tunneling results with a simple molecular vibration calculation yields further information on the configuration of the molecular thin film and the possible tunneling states of the spin-polarized electrons. Such interplay indicates a true transport of spin-polarized electrons through organic material rather than through defects or interdiffusion compounds formed at the interfaces within the organic spin valve.
Relation:	PHYSICAL REVIEW B Volume: 83 Issue: 17 Article Number: 172404
Appears in Collections:	[Department of Physics ] journal articles

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