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https://irlib.pccu.edu.tw/handle/987654321/24018
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Title: | Comparative study of low dielectric constant material deposited using different precursors |
Authors: | Wei, BJ (Wei, Bor-Jou) Cheng, YL (Cheng, Yi-Lung) Lu, FH (Lu, Fu-Hsing) Chiu, TJ (Chiu, Tai-Jung) Shih, HC (Shih, Han-Chang) |
Contributors: | Inst Mat Sci & Nanotechnol |
Keywords: | CHEMICAL-VAPOR-DEPOSITION OXIDE-FILMS RELIABILITY BARRIER HEXAMETHYLDISILOXANE INTERCONNECTS |
Date: | 2011-07 |
Issue Date: | 2013-01-16 15:55:15 (UTC+8) |
Abstract: | Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition in this work. The experimental results indicate that DEMS-based low-k films have superior electrical and reliability performances than 3MS-based low-k films. Furthermore, the DEMS-based low-k films exhibit a higher mechanical strength, chemical and thermal stability, and better adhesion strength on various barrier films. Therefore, the DEMS-based films are promising low-k materials, which can be integrated in a very large scale integration circuit as an interlayer dielectric material. (C) 2011 American Vacuum Society. |
Relation: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 29 Issue: 4 Article Number: 041507 |
Appears in Collections: | [化學工程與材料工程學系暨碩士班] 期刊論文
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