Comparative study of low dielectric constant material deposited using different precursors

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Title:	Comparative study of low dielectric constant material deposited using different precursors
Authors:	Wei, BJ (Wei, Bor-Jou) Cheng, YL (Cheng, Yi-Lung) Lu, FH (Lu, Fu-Hsing) Chiu, TJ (Chiu, Tai-Jung) Shih, HC (Shih, Han-Chang)
Contributors:	Inst Mat Sci & Nanotechnol
Keywords:	CHEMICAL-VAPOR-DEPOSITION OXIDE-FILMS RELIABILITY BARRIER HEXAMETHYLDISILOXANE INTERCONNECTS
Date:	2011-07
Issue Date:	2013-01-16 15:55:15 (UTC+8)
Abstract:	Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition in this work. The experimental results indicate that DEMS-based low-k films have superior electrical and reliability performances than 3MS-based low-k films. Furthermore, the DEMS-based low-k films exhibit a higher mechanical strength, chemical and thermal stability, and better adhesion strength on various barrier films. Therefore, the DEMS-based films are promising low-k materials, which can be integrated in a very large scale integration circuit as an interlayer dielectric material. (C) 2011 American Vacuum Society.
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 29 Issue: 4 Article Number: 041507
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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