Effect of the doped nitrogen on the optical properties of beta-Ga2O3 nanowires

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题名:	Effect of the doped nitrogen on the optical properties of beta-Ga2O3 nanowires
作者:	Chang, LW (Chang, Li-Wei)1 Lu, TY (Lu, Ting-Yu) Chen, YL (Chen, Yan-Li) Yeh, JW (Yeh, Jien-Wei) Shih, HC (Shih, Han C.)
贡献者:	Dept Chem & Mat Engn
关键词:	Gallium oxide Nanowires Chemical vapor deposition Luminescence Optical materials and properties
日期:	2011-07-31
上传时间:	2013-01-16 13:57:47 (UTC+8)
摘要:	In this study, optical properties of the nitrogen-doped beta-Ga2O3 nanowires (N-doped beta-Ga2O3 NWs) were synthesized by exposing beta-Ga2O3 NWs under high input power nitrogen plasma (2 kW), using a microwave plasma enhanced chemical vapor deposition (MPECVD) system. The nitrogen contents in the NWs were as-prepared about 7.4, 8.9, 9.7, 13.9, 19.3, and 26.6 at.%, respectively. Low temperature (10 K) cathodoluminescence (CL) spectra exhibit significantly different optical properties for the different nitrogen contents. The CL result of the N-doped beta-Ga2O3 NWs (210 s N-2 plasma treatment) exhibited four distinct emission peaks at 378, 516, 759, and 970 nm. The possible light emission mechanism including the effect of the nitrogen dopant was discussed. (C) 2011 Elsevier B.V. All rights reserved.
關聯:	MATERIALS LETTERS Volume: 65 Issue: 14 Pages: 2281-2283
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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