Effect of the doped nitrogen on the optical properties of beta-Ga2O3 nanowires

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Title:	Effect of the doped nitrogen on the optical properties of beta-Ga2O3 nanowires
Authors:	Chang, LW (Chang, Li-Wei)1 Lu, TY (Lu, Ting-Yu) Chen, YL (Chen, Yan-Li) Yeh, JW (Yeh, Jien-Wei) Shih, HC (Shih, Han C.)
Contributors:	Dept Chem & Mat Engn
Keywords:	Gallium oxide Nanowires Chemical vapor deposition Luminescence Optical materials and properties
Date:	2011-07-31
Issue Date:	2013-01-16 13:57:47 (UTC+8)
Abstract:	In this study, optical properties of the nitrogen-doped beta-Ga2O3 nanowires (N-doped beta-Ga2O3 NWs) were synthesized by exposing beta-Ga2O3 NWs under high input power nitrogen plasma (2 kW), using a microwave plasma enhanced chemical vapor deposition (MPECVD) system. The nitrogen contents in the NWs were as-prepared about 7.4, 8.9, 9.7, 13.9, 19.3, and 26.6 at.%, respectively. Low temperature (10 K) cathodoluminescence (CL) spectra exhibit significantly different optical properties for the different nitrogen contents. The CL result of the N-doped beta-Ga2O3 NWs (210 s N-2 plasma treatment) exhibited four distinct emission peaks at 378, 516, 759, and 970 nm. The possible light emission mechanism including the effect of the nitrogen dopant was discussed. (C) 2011 Elsevier B.V. All rights reserved.
Relation:	MATERIALS LETTERS Volume: 65 Issue: 14 Pages: 2281-2283
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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