In this paper, we study the dielectric properties of tetragonal phase and hexagonal phase of BaTiO3 systems. We synthesize the BaTiO3 samples with Zr-doping and Ga-doping, which are tetragonal structure and hexagonal structure, respectively. All samples are analyzed by powder X-ray diffraction, which are single-phase. Based on the "Rietveld profile-fitting method", the all Ga-doping compounds are the same symmetric space group (P63/mmc) and all Zr-doping compounds are the same symmetric space group (P4mm). Although the Ga-doping samples can form the hexagonal structure, but the samples is existence anomaly giant phase when the sintering temperature is over 1400℃. The microwave properties were showed that the Qxf values of Zr-doping samples are increasing with a-axis length increasing. The Qxf values of Ga-doping samples are decreasing with Ga-doping level increasing and decreasing with a-axis length increasing. Because the grain growth of the 10% Zr-doping sample is satisfactory than others, which is due to the Qxf value of Zr-doping sample is maximum. The Qxf values of all Ga-doping samples are larger than the un-doping BaTiO3, which means the microwave property of BaTiO3 system can be improved by doping Ga.
