研究鋇鈦氧系統之化學摻雜對微波性質的影響

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Title:	研究鋇鈦氧系統之化學摻雜對微波性質的影響
Authors:	王鈺騏王博彥雷健明
Contributors:	工學院
Keywords:	六方晶鈦酸鋇摻雜鎵之鈦酸鋇微波性質 Hexagonal BaTiO3 Ga-doping BaTiO3 Microwave properties
Date:	2008-06-01
Issue Date:	2012-04-11 14:48:25 (UTC+8)
Abstract:	本實驗中探討正方晶鈦酸鋇與六方晶鈦酸鋇之介電性質，選擇在鈦酸鋇系統中摻雜鎵(3+)與鋯(4+)做為探討六方晶與正方晶鈦酸鋇之性質研究。經由XRD分析及Rietveld法模擬結果，可知樣品均為單一相，且摻雜鎵之鈦酸鋇為六方晶結構，空間群為P63/mmc，而鈦酸鋇與摻雜鋯之鈦酸鋇為正方晶結構，空間群屬於P4mm，然而在摻雜鎵的樣品中，當燒結超過1400℃後有巨大液相燒結相產生。從微波性質來說，摻雜鋯之鈦酸鋇Qxf値隨a軸長度增加而增加，摻雜鎵之鈦酸鋇，Qxf値隨摻雜鎵濃度增加而減少，也隨a軸長度增加而減少。由微波性質之結果分析可知，摻雜10%鋯之鈦酸鋇的晶粒成長較明顯，造成Qxf為最高。而摻雜鎵之鈦酸鋇平均Qxf値都較純鈦酸鋇為高，可以有效提昇微波性質。 In this paper, we study the dielectric properties of tetragonal phase and hexagonal phase of BaTiO3 systems. We synthesize the BaTiO3 samples with Zr-doping and Ga-doping, which are tetragonal structure and hexagonal structure, respectively. All samples are analyzed by powder X-ray diffraction, which are single-phase. Based on the "Rietveld profile-fitting method", the all Ga-doping compounds are the same symmetric space group (P63/mmc) and all Zr-doping compounds are the same symmetric space group (P4mm). Although the Ga-doping samples can form the hexagonal structure, but the samples is existence anomaly giant phase when the sintering temperature is over 1400℃. The microwave properties were showed that the Qxf values of Zr-doping samples are increasing with a-axis length increasing. The Qxf values of Ga-doping samples are decreasing with Ga-doping level increasing and decreasing with a-axis length increasing. Because the grain growth of the 10% Zr-doping sample is satisfactory than others, which is due to the Qxf value of Zr-doping sample is maximum. The Qxf values of all Ga-doping samples are larger than the un-doping BaTiO3, which means the microwave property of BaTiO3 system can be improved by doping Ga.
Relation:	華岡工程學報 22期 p.65 -70
Appears in Collections:	[College of Engineering] Chinese Culture University Hwa Kang Journal of Engineering

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