In this study, five elements of Ti, Fe, Co, Ni and Cu were selected to produce TiFeCoNiCu(subscript x) (x=1~3) alloy target for depositing thin films. The thin films were produced by the high vacuum DC sputtering processing. Some thin films were vacuum annealed at high temperature for investigating the effects of annealing conditions on their electrical resistivity. The annealing temperatures were from 300℃ to 450℃. These thin films became metal oxide films because of the air still leaking in the vacuum furnace during the vacuum annealing. TiFeCoNiCu1 oxide films had a lowest resistivity of 128 μΩ-cm after vacuum annealed at 450℃ for 4hr. TiFeCoNiCu2 oxide thin films had a lowest resistivity of 240 μΩ-cm after vacuum annealed at 350℃ for 1hr. TiFeCoNiCu3 oxide thin films had a lowest resistivity of 101 μΩ-cm after vacuum annealed at 400℃ for 4hr. The resistivity of TiFeCoNiCu1 oxide and TiFeCoNiCu3 oxide are lower than that of the ITO thin film (~150 μΩ-cm).
