| Abstract: | 本實驗目的在於開發低電阻的金屬氣化物薄膜，以Ti、Fe、Co、Ni與Cu元素製成TiFeCoNiCu(下標 x)合金靶材（Cu含量莫耳比x=1~3)，使用高真空直流濺鍍機來鍍製合金薄膜，利用真空高溫爐作300℃、350℃、400℃、450℃與500℃之退火處理，觀察薄膜導電性質與退火溫度之相互關係。薄膜經過不同溫度退火後，其內部電阻會降低，TiFeCoNiCu1氧化物薄膜在450℃4小時退火處理後，最低點電阻率降至128μΩ-cm；TiFeCoNiCu2氧化物薄膜在350℃1 小時退火處理後，電阻率為240μΩ-cm；TiFeCoNiCu3氧化物薄膜在400℃4小時退火處理後，電阻率的最低點可以達到101μΩ-cm，比ITO的電阻率150μΩ-cm還低。薄膜耐溫性質以TiFeCoNiCu1氧化物及TiFeCoNiCu3氧化物效果較佳，在高溫下退火時間可長達7小時；但是真空退火會讓薄膜表面長出富Cu氣化物。
In this study, five elements of Ti, Fe, Co, Ni and Cu were selected to produce TiFeCoNiCu(subscript x) (x=1~3) alloy target for depositing thin films. The thin films were produced by the high vacuum DC sputtering processing. Some thin films were vacuum annealed at high temperature for investigating the effects of annealing conditions on their electrical resistivity. The annealing temperatures were from 300℃ to 450℃. These thin films became metal oxide films because of the air still leaking in the vacuum furnace during the vacuum annealing. TiFeCoNiCu1 oxide films had a lowest resistivity of 128 μΩ-cm after vacuum annealed at 450℃ for 4hr. TiFeCoNiCu2 oxide thin films had a lowest resistivity of 240 μΩ-cm after vacuum annealed at 350℃ for 1hr. TiFeCoNiCu3 oxide thin films had a lowest resistivity of 101 μΩ-cm after vacuum annealed at 400℃ for 4hr. The resistivity of TiFeCoNiCu1 oxide and TiFeCoNiCu3 oxide are lower than that of the ITO thin film (~150 μΩ-cm). |
