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    請使用永久網址來引用或連結此文件: https://irlib.pccu.edu.tw/handle/987654321/21033


    題名: Synthesis and Luminescence Properties of AlN Nanowires
    作者: Wu, HM (Wu, Hue-Min)
    Liang, JY (Liang, Jaw-Yeu)
    貢獻者: 物理系
    關鍵詞: Aluminum nitride nanowires
    catalyst-assisted chemical vapor deposition
    wurtzite structure
    band gap structure
    optical properties
    日期: 2009
    上傳時間: 2011-12-12 14:59:13 (UTC+8)
    摘要: We have investigated growth conditions and structure of Wurzite AlN nanowires grown on sapphire (0002) substrates by chemical vapor deposition. The morphology, and structure were characterized by scanning electron microscopy, X-ray diffraction, and Raman analysis. Luminescence properties of AlN nanowires were studied by electron and photon excitation measurements, such as cathodoluminescence and photoluminescence. Band to band excitonic feature at 6.12 eV was first observed at room temperature in this study. Two typical defect band related transmissions around 3.0 eV and 4.85 eV were also observed, which are due to the radioactive recombination processes involving oxygen impurity and Al vacancies.
    顯示於類別:[Department of Physics ] journal articles

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