Synthesis and Luminescence Properties of AlN Nanowires

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题名:	Synthesis and Luminescence Properties of AlN Nanowires
作者:	Wu, HM (Wu, Hue-Min) Liang, JY (Liang, Jaw-Yeu)
贡献者:	物理系
关键词:	Aluminum nitride nanowires catalyst-assisted chemical vapor deposition wurtzite structure band gap structure optical properties
日期:	2009
上传时间:	2011-12-12 14:59:13 (UTC+8)
摘要:	We have investigated growth conditions and structure of Wurzite AlN nanowires grown on sapphire (0002) substrates by chemical vapor deposition. The morphology, and structure were characterized by scanning electron microscopy, X-ray diffraction, and Raman analysis. Luminescence properties of AlN nanowires were studied by electron and photon excitation measurements, such as cathodoluminescence and photoluminescence. Band to band excitonic feature at 6.12 eV was first observed at room temperature in this study. Two typical defect band related transmissions around 3.0 eV and 4.85 eV were also observed, which are due to the radioactive recombination processes involving oxygen impurity and Al vacancies.
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