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https://irlib.pccu.edu.tw/handle/987654321/20477
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| 題名: | Modulation of luminescence emission spectra of N-doped beta-Ga(2)O(3) nanowires by thermal evaporation |
| 作者: | Shih, HC (Shih, Han C.)
Chang, LW (Chang, Li-Wei) |
| 貢獻者: | 化材所 |
| 關鍵詞: | Nanowires
Gallium oxide
Cathodoluminescence |
| 日期: | 2009 |
| 上傳時間: | 2011-11-28 14:09:29 (UTC+8) |
| 摘要: | In this study,we have synthesized N-doped beta-Ga(2)O(3) nanowires on a p-type Si (100) substrate at the temperature of 850 degrees C through evaporation to modulate the spectra of the luminescence emission. Both TEM and XRD analyses confirmed that N-doped beta-Ga(2)O(3) is monoclinic with a uniform mean diameter of 30 nm and a length up to several tens of micrometers. As determined by selected area diffraction (SAD), the growth direction of N-doped beta-Ga(2)O(3) nanowires is [002]. The optical properties of the N-doped beta-Ga(2)O(3) nanowires were studied by cathodoluminescence (CL) at the 10 and 300 K, exhibiting a UV and red light emission as a function of the nitrogen dopant. The results serve to reinforce the potential of N-doped beta-Ga(2)O(3) nanowires for optoelectronic device applications. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved. |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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