Modulation of luminescence emission spectra of N-doped beta-Ga(2)O(3) nanowires by thermal evaporation

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Title:	Modulation of luminescence emission spectra of N-doped beta-Ga(2)O(3) nanowires by thermal evaporation
Authors:	Shih, HC (Shih, Han C.) Chang, LW (Chang, Li-Wei)
Contributors:	化材所
Keywords:	Nanowires Gallium oxide Cathodoluminescence
Date:	2009
Issue Date:	2011-11-28 14:09:29 (UTC+8)
Abstract:	In this study,we have synthesized N-doped beta-Ga(2)O(3) nanowires on a p-type Si (100) substrate at the temperature of 850 degrees C through evaporation to modulate the spectra of the luminescence emission. Both TEM and XRD analyses confirmed that N-doped beta-Ga(2)O(3) is monoclinic with a uniform mean diameter of 30 nm and a length up to several tens of micrometers. As determined by selected area diffraction (SAD), the growth direction of N-doped beta-Ga(2)O(3) nanowires is [002]. The optical properties of the N-doped beta-Ga(2)O(3) nanowires were studied by cathodoluminescence (CL) at the 10 and 300 K, exhibiting a UV and red light emission as a function of the nitrogen dopant. The results serve to reinforce the potential of N-doped beta-Ga(2)O(3) nanowires for optoelectronic device applications. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
Appears in Collections:	[Department of Chemical & Materials Engineering] journal articles

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