In this thesis, the anodization electrochemical etching process with an extra bias source for porous silicon manufacture was proposed. Experiments indicated that, the studied method could increase the etching rate while the PS membrane was performed with the n-type Si-wafer. On the contrary, it would create a selective etching process if the p-type substrate was utilized.
According to this observed selective-etching property, a horizontal top-side anode setting for manufacturing PS was continuously present, and the PS with lateral pillar structure was obtained. Based on it, the anodizaiotn etching method of contacted anode electrode was also studied with n-type and p-type Si-wafer. For p-type Si-wafer, the obtained PS structure was similar to PS membrane with conventional method, and the polishing structure was occurred on the PS membrane near to the anode position. On the other hand, the obvious lateral pillars structure was obtained from PS membrane on n-type Si-wafer. It indicated that the method of contacted anode electrode could be used to fabricate the PS membrane with lateral pillar structure. Then, the electroluminescence properties and its mechanism analysis of fabricated PS membrane were made.
