多孔矽發光特性及偏壓效應之影響

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Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/20233

Title:	多孔矽發光特性及偏壓效應之影響
Authors:	陳家國
Contributors:	材料科學與奈米科技研究所
Keywords:	多孔矽偏壓場發射掃描式電子顯微鏡場發射矽柱橫向蝕刻電激發光
Date:	2010
Issue Date:	2011-11-07 13:36:22 (UTC+8)
Abstract:	本文以矽晶片陽極電化學以及外加偏壓電路進行蝕刻，針對其在P型以及N型矽晶片蝕刻上的影響做控制。結果發現，對N型施加一順向偏壓可以加速其整體蝕刻過程，而在P型施加一逆向偏壓可以控制蝕刻的劇烈程度並且製造選擇性蝕刻。　　此外，本研究也在矽晶片表面做水平電極蝕刻，試圖製造橫向的蝕刻結構。根據場發射掃描式電子顯微鏡(SEM)觀察其結構發現到只有在靠近陽極部分有蝕刻現象，並且證實有橫向蝕刻的結構。再者，我們採取了單點橫向蝕刻機制，並分別對P型以及N型做分析。在P型矽上，發現單點橫向蝕刻機制所製造的多孔矽，與傳統蝕刻相似，在靠近陽極區域有大量蝕刻並接近拋光現象；但在接近單點陰極線的部分則為結構穩固垂直的多孔矽，並在陰極線下形成單根矽柱結構。而在N型矽上以此種方式蝕刻後，卻發現在靠近O環區域以SEM觀測有著蝕刻孔洞轉橫的現象。如此說明單點橫向蝕刻有著與在晶片表面水平電極蝕刻一樣的效果。　　最後以這種不同於傳統垂直式蝕刻結構的單點橫向蝕刻，嘗試對多孔矽作電激發光，研究其在不同環境狀態下可能電激發光的原因。 In this thesis, the anodization electrochemical etching process with an extra bias source for porous silicon manufacture was proposed. Experiments indicated that, the studied method could increase the etching rate while the PS membrane was performed with the n-type Si-wafer. On the contrary, it would create a selective etching process if the p-type substrate was utilized. 　　According to this observed selective-etching property, a horizontal top-side anode setting for manufacturing PS was continuously present, and the PS with lateral pillar structure was obtained. Based on it, the anodizaiotn etching method of contacted anode electrode was also studied with n-type and p-type Si-wafer. For p-type Si-wafer, the obtained PS structure was similar to PS membrane with conventional method, and the polishing structure was occurred on the PS membrane near to the anode position. On the other hand, the obvious lateral pillars structure was obtained from PS membrane on n-type Si-wafer. It indicated that the method of contacted anode electrode could be used to fabricate the PS membrane with lateral pillar structure. Then, the electroluminescence properties and its mechanism analysis of fabricated PS membrane were made.
Appears in Collections:	[Department of Chemical & Materials Engineering] thesis

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