利用過濾式陰極電弧電漿沉積碳化鈦之合成與鑑定研究

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Title:	利用過濾式陰極電弧電漿沉積碳化鈦之合成與鑑定研究 Synthesis and characterization of Titanium carbide by Filter Cathodic Arc Plasma
Authors:	吳澤民
Contributors:	材料科學與奈米科技研究所
Keywords:	過濾式陰極電弧碳化鈦
Date:	2007
Issue Date:	2010-07-05 10:30:54 (UTC+8)
Abstract:	本研究主要是利用過濾式陰極電弧(Filter Cathodic Arc Deposition, FCAD)沉積系統，其中具有附加過濾器來改善FCAD製程沉積微粒過大之缺點，在表面粗操度、鍍膜附著性與孔隙率有極大的改善，且鍍膜結構不變，又因孔隙率隨particle縮小而減少，使得鍍膜沉積速率降低。陰極電弧具有薄膜密度高、附著力強、沉積速度快，均勻性佳等優點，並藉由控制不同的偏壓及氣體流量製備出不同厚度之TiC膜。可減少時間及成本的增加，更可依不同的應用與需求，搭配不同的鍍膜種類與成分。本實驗探討TiC膜，並觀察界面之微觀組織和特性。利用X光繞射分析儀分析得到在固定流率下，偏壓越大TiC 越明顯。以SEM觀察發現改變C2H2的流量變因下，發現隨著流量的增加，沈積速率逐漸的下降。在Raman光譜發現固定流量，偏壓-400V，效果最佳。XPS可以觀察到隨著基材偏壓的上升，TiC薄膜的鍵結能量一致地往低能偏移，碳碳鍵逐漸變多，同時造成試片硬度提升。AFM觀察得到在固定偏壓下增加C2H2流量，薄膜的表面粗糙度會隨之提升。 In this study, we use the Filter Cathodic Vacuum Arc Deposition System. Due to have Filter System, it can be improved to filter macro-particle. At surface roughness, plates the film adhering and has great improvement with the hole rate on the surface, and plate the film structure do not change, because hole rate reduce to dwindle with particle, it make to speed reduce of plate film. The Cathodic Arc will have film to be density high, adhesive force strong, fast to deposit speed, advantage such as being good of the homogeneity, and by controlling different bias voltage and flow of gas will get different thickness of TiC film. The process can reduce the increase of the time and cost, and it can depend on different application and demand even more, equally match different kind and composition of plating film. The experiment discusses the TiC film, and observes micro-structure and characteristic of the interface. Utilize the X-Rays Diffraction analysis gets it under the regular flowing rate. If bias voltage is bigger, TiC intensity will be obvious. We used SEM to observe and discover when change C2H2 flow rate finding the increase with the flow, deposits speed would be slow down. We find the regular flow, and bias voltage -400V in Raman spectrum, the result is the best. XPS can observe the rising with the bias voltage of substrate, the binding energy of TiC film changes to low energy unanimously. The c-c bond becomes many gradually; cause the film of hardness to improve at the same time. At AFM observes and receives increasing C2H2 flow under the regular bias voltage. The roughness of surface of the film will be improved thereupon.
Appears in Collections:	[Department of Chemical & Materials Engineering] thesis

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