溶液前驅物大氣電漿技術製備BaCeZrYYbO3-δ 鍍膜於鈣鈦礦型質子導體燃料電池之應用

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Title:	溶液前驅物大氣電漿技術製備BaCeZrYYbO3-δ 鍍膜於鈣鈦礦型質子導體燃料電池之應用 Coating of BaCeZrYYbO3-δ Using Solution Precursor Plasma Spray for Application in Proton Conduction Fuel Cell
Authors:	曾威翔 ZENG, WEI-XIANG
Contributors:	化學工程與材料工程學系
Keywords:	燃料電池質子導體鈣鈦礦結構溶液前驅物大氣電漿鍍膜薄膜參數研究 fuel cell proton conductor perovskite structure solution precursor atmospheric plasma coating film parameter research film parameter research
Date:	2025
Issue Date:	2025-03-14 15:59:19 (UTC+8)
Abstract:	固態氧化物燃料電池，有低汙染、高能源轉換率、低噪音等優點，但是它也有許多問題需要克服，因為操作溫度過高的關係，啟動時需要大量的時間跟能源消耗、元件壽命因為高溫的關係而減少、製造技術困難、成本高的問題，為了將操作溫度降低至300~600℃，減輕溫度過高的問題。本研究使用前驅物大氣電漿技術在基材上鍍製BaCeZrYYbO3-δ薄膜電解質，透過降低電解質厚度，來降低電阻，有望達到在300~600℃使用。本研究對大氣電漿鍍膜技術的各項參數進行最佳化處理，使薄膜厚度均一且緻密，實驗得到的最佳參數為:掃描速率10 mm/s、掃描間距3 mm、電漿與基板間距離1.4 cm、電漿功率550 W，前驅物氣體流量1.25 L/min，在矽晶板上得到相對完整的結果，接著在多晶與單晶氧化鋁板上鍍膜，透過燒結條件控制與多次鍍膜，在氧化鋁板上度上一層BCZYYb薄膜層，薄膜厚度約1.58 μm，透過結晶相分析發現，在燒結條件1100℃，1小時時，可以觀測到BCZYYb立方向CeO2、ZrO2的結晶相，及並且經過1400℃，1小時燒結後仍有CeO2、ZrO2的結晶相，並未產生單一的BCZYYb結晶相。 Solid oxide fuel cells have the advantages of low pollution, high energy conversion rate, and low noise, but they also have many problems to overcome. Because of the high operating temperature, it takes a lot of time and energy to start up, and the life of the components is shortened due to high temperature. In order to reduce the operating temperature to 300~600℃ and alleviate the problem of excessive temperature, the manufacturing technology is difficult and the cost is high. This study uses precursor atmospheric plasma technology to deposit BaCeZrYYbO3-δ thin film electrolyte on the substrate. By reducing the thickness of the electrolyte, the resistance is reduced, and it is expected to be used at 300~600℃. In this study, various parameters of atmospheric plasma coating technology were optimized to make the film thickness uniform and dense. The optimal parameters obtained from the experiment were: scanning rate 10 mm/s, scanning spacing 3 mm, and spacing between plasma and substrate The distance was 1.4 cm, the plasma power was 550 W, and the precursor gas flow rate was 1.25 L/min. Relatively complete results were obtained on the silicon wafer. Then, the film was deposited on the polycrystalline and single-crystalline alumina wafers. Through the control of sintering conditions and multiple Coating, a layer of BCZYYb thin film layer is coated on the alumina plate, the film thickness is about 1.58 μm, through the crystal phase analysis, it is found that when sintered at 1100℃ for 1 hour, the crystal phases of CeO2 and ZrO2 in the cubic direction of BCZYYb can be observed. And after sintering at 1400℃ for 1 hour, there are still CeO2 and ZrO2 crystalline phases, and no single BCZYYb crystalline phase is produced.
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