本研究採用固態反應法合成了摻雜氧化銦的 W 型六方鐵氧體 SrMg2InxFe16-xO27（X=0.0、0.2、0.4、0.6、0.8 和 1.0），以研究其組成轉變、微觀結構和微波特性。 X 光繞射結果表明，摻銦的氧化鍶鎂鐵樣品的結構為 W 型六方鐵氧體(h-鐵氧體)，空間群為 P63/mmc，並且可以觀察到隨著燒結溫度的升高，摻銦樣品的結構從 M 型 h-鐵氧體逐漸轉變為 W 型 h-鐵氧體，然後又轉變為尖晶石型。 OM 圖像顯示，晶粒尺寸隨著摻銦含量的增加而增大，同時也發現 1250°C 燒結樣品的晶粒尺寸比其他燒結溫度的樣品要大。 Topas 軟體的分析結果表明在我們的混合相樣品中，1250°C 燒結樣品的 W 型鐵氧體佔相比最大，由於銦離子的半徑較大，W 型 h-鐵氧體結構單胞體積大小隨著摻 In 量的增加而增加。樣品的交流磁導率隨燒結溫度的升高而增大，1250°C 燒結溫度下的樣品的交流磁導率隨摻銦量的增加而緩慢增大，但在微波頻率下差異逐漸減小。微波特性測量數據表明，1250°C 燒結樣品的介電常數隨著摻雜濃度的增加而緩慢減小，但介電損耗會隨著摻雜濃度的增加而減小。透過交流磁導率以及介電分析發現，隨著銦離子摻雜的增加，磁性也跟著提升，但介電性質隨著摻雜而下降。
In this study, we synthesis the indium doped W-type hexagonal ferrite SrMg2InxFe16-xO27 (X=0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) by solid state reaction method, in order to investigate the structure transition, microstructure and microwave properties. The X-ray diffraction results report that structure of In-doped strontium magnesium iron oxide samples is W-type hexagonal ferrite (h-ferrite) with P63/mmc space group, and it also can be observed that the structure of In-doped samples gradually changes from M-type h-ferrite to W-type h-ferrite then spinal with sintering temperature increasing. The OM images show that the grain size was growth up with In-doped content increasing, and those also shows that the grain size of 1250°C sintering sample is larger than it of the others sintering temperature’s samples. The “Topas software” analysis results display that the maximum W-type ferrite phase percentage of the mix-phase samples are observed of the 1250°C sintering samples, which unit cell volume of W-type h-ferrite structure is increasing with In-doped amount increasing due to In-ion’ larger radii. The AC permeability of samples are increasing with the sintering temperature increasing and it of the 1250°C sintering temperature of samples are slowly increasing with In-doping ratio increasing, but the divergences will be gradually reduce at microwave frequency. The microwave property measurement data shows that the dielectric constant of 1250°C sintering samples is slowly decreasing by increasing In-doped concentrations, and the dielectric loss can reduce with In-doped concentrations increasing.
