本論文採用混合氧化物法來製備摻銦W型鐵氧體BaMg2InxFe16-xO27(x=0.0、0.2、0.4、0.6、0.8與1.0),以研究該鐵氧體的燒結溫度效應與其微波和磁性特性。透過OM圖像可觀察到,銦摻雜的W型鐵氧體樣品之晶粒尺寸隨著燒結溫度的升高而逐漸提升隨,並且可以觀察到在低摻雜濃度(x=0.0~0.4)的樣品晶粒生長溫度為1250℃,而高摻雜度(x=0.6~1.0)的樣品晶粒生長溫度為1300℃。樣品XRD之繞射圖譜結果表明,銦摻雜的W型鐵氧體相為六方結構,具有P63/mmc空間群係之對稱性,其a軸與c軸晶格常數接近0.59nm和3.30nm。並且,本次實驗還通過“Topas”軟體對XRD圖譜進行了分析,用來對其系統中的相變化進行研究。結果表明燒結溫度為1300℃~1350℃時,該燒結溫度可以觀察到混合相樣品中含量最多的W型鐵氧體。室溫VSM測量結果表明,W型的樣品飽和磁化強度(Ms)和矯頑力場(Hc)隨銦摻雜量提升而降低,且交流磁導的結果顯示所有樣品都具有Neel磁鬆弛行為。對燒結溫度為1350℃的銦摻雜W型鐵氧體的微波介電測量可知,樣品的介電常數在x=0.4處為局部最優銦摻雜量,並且該結果表明W型鐵氧體可以通過銦摻雜來改善介電性能並同時保持較好的磁性性能。
In this thesis, the In-doped W-type hex-ferrites (BaMg2InxFe16-xO27, with x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0) were prepared by the mixed oxide method to study the sintering temperature effect, microwave and magnetic properties of this ferrites. The grain size of the In-doped W-type ferrite samples is increasing with sintering temperature increasing, which is observed from OM pictures. The grain growth temperature of lower doped concentration (x=0.0~0.4) samples is 1250oC and it of higher doped concentration (x=0.6~1.0) samples is 1300oC. X-ray Diffraction patterns of all samples are shown that the In-doping W-type ferrites phase of the samples is hexagonal structure with P63/mmc space group symmetry, and its lattices constant of a-axis and c-axis are near 0.59nm and 3.30nm. And it also has been analyzed by the “Topas” software to investigate the phase transformation of this system. The optimal sintering temperature range is 1300-1350oC, which sintering temperature can observe the largest W-type ferrites phase presentage of the mix-phase samples. Saturation magnetization (Ms) and coercivity field (Hc) of W-type samples are decreasing with In-doped amount increasing, which was reported by room temperature VSM measurement. The room temperature AC magnetic susceptibility measurement shows that all samples obey the Neel magnetic relaxation behavior. The microwave property measurement of 1350oC sintering temperature In-doped W-type ferrites is showed that the dielectric constant of samples is local optimal Indium’s doped amount at x=0.4. This result indicate s that the W-type ferrites can improve the dielectric property and maintain magnetization by In-doped.