Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/45653

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Title:	Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures
Authors:	Wang, CC (Wang, Chih-Chiang) Lu, CL (Lu, Chia-Lun) Shieu, FS (Shieu, Fuh-Sheng) Shih, HC (Shih, Han C.)
Contributors:	化材系
Keywords:	Ga-doped V2O5 nanorods Photoluminescence Vapor-solid mechanism
Date:	2020-01
Issue Date:	2020-01-20 13:44:56 (UTC+8)
Abstract:	Ga-doped V2O5 nanorods were fabricated by thermal evaporation at 850 degrees C using the V-S mechanism. XRD and XPS reveal that the Ga was doped into the V2O5 crystal structures and that a Ga-O phase was formed. HRTEM revealed the growth of Ga-free and Ga-doped nanorods in the [1 1 0] direction. Photoluminescence properties indicated that Ga at 0.5 wt% increased the luminescence intensities at 1.77 and 1.94 eV by factors of 1.65 and 1.82, whereas Ga > 1 wt% reduced the intensities. These results suggest that the interstitial Ga and Ga-O phases influence the photoluminescence properties of V2O5 nanorods.
Relation:	CHEMICAL PHYSICS LETTERS 卷冊: 738 文獻號碼: 136864
Appears in Collections:	[化學工程與材料工程學系暨碩士班] 期刊論文

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