| 摘要: | 拓樸絕緣體(topological insulator，TI)是最近十幾年被發現的新量子材料，它可在常溫及無外加磁場條件下產生量子自旋霍爾效應(quantum spin Hall effect)，同時也具備了常見物質所沒有的獨特性質－導電表面、絕緣塊材，產生這樣的特性是來自於TI本身的強自旋-軌道耦合效應(strong spin-orbit coupling effect)及時間反演對稱性(time-reversal symmetry)的影響，因為這獨特的特性，TI材料被視為是電、磁及光學領域應用相當具潛力的材料，包括:場效電晶體(field-effect transistor)、雷射、光偵測器、電-磁元件、電池、氣體感測器、自旋子元件(spintronic device)等等。由於TI材料是同時具有表面導電/塊材絕緣的同質結構材料，因此在外加能量(光線)的作用下，會在表面產生局域性表面電漿子(localized surface plasmons，LSPs)，並增強表面的近場之電磁場強度，因此本研究計畫將利用電子迴旋共振增強化學氣相沉積技術(electron cyclotron resonance-enhanced chemical vapor deposition， ECR-CVD)於p-Si(100)、陽極處理氧化鋁(anodic alumina，AAO)及NaCl(100)基板上分別製備Bi2Te3、Bi2Se3及Sb2Te3的TI奈米結構材料，探討其成長機制及其增益的近場電磁場於表面增強拉曼散射(surface-enhanced Raman scattering，SERS)效應之特性研究。
Topological insulators (TI) are a newly discovered quantum matter nearly a decade. It exhibits the quantum spin Hall effect without an external magnetic field under the room temperature. It also possesses a unique property of conductive surface with insulating bulk which is ascribed to the spin-orbit coupling effect and the time-reversal symmetry. Hence, TIs are regard as the promising materials in the fields of electric, magnetic, and optical such as field-effect transistors, lasers, photodetectors, electro-magnetic devices, batteries, gas sensors, spintronic devices, and so on. The surface state of the TI should generate the localized surface plasmons (LSPs), while an external energy (light) incident into TI materials, due to the unique structure of conductive surface/insulating bulk of the TI materials. Subsequently, the near-field intensity will be enhanced. Based on the phenomenon, this study is going to employ a electron cyclotron resonance-enhanced chemical vapor deposition (ECR-CVD) deposition system to fabricate the TI nanostructures of Bi2Se3, Bi2Te3, and Sb2Te3 on the substrates of p-Si(100), anodic alumina (AAO), and NaCl(100), respectively. After that, the TI growth mechanism, and the property of SERS of the TI nanostructures by the enhanced near-field intensity will be systematically studied and discussed. |
