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請使用永久網址來引用或連結此文件:
https://irlib.pccu.edu.tw/handle/987654321/41941
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| 題名: | Low-resistivity oxides in TixFeCoNi thin films after vacuum annealing |
| 作者: | Yang, YC (Yang, Ya-Chu)
Tsau, CH (Tsau, Chun-Huei)
Yeh, JW (Yeh, Jien-Wei)
Che, SK (Che, Swe-Kai) |
| 貢獻者: | 化學工程與材料工程學系暨奈米材料研究所 |
| 關鍵詞: | :ELECTRICAL-PROPERTIES
RUO2
SI |
| 日期: | 2018 |
| 上傳時間: | 2019-01-22 13:30:43 (UTC+8) |
| 摘要: | In this study, we investigated the electrical properties and microstructures of FeCoNi, Ti0.5FeCoNi, and TiFeCoNi thin films, with the aim of identifying new oxygen-deficient oxides with low resistivity. The resistivity values of as-deposited FeCoNi, Ti0.5FeCoNi, and TiFeCoNi films were 1089, 2883, and 5708 mu Omega-cm, respectively. After vacuum annealing at 1000 degrees C for 30 min, the resistivity values plummeted to 20.4, 32.1, and 45.4 mu Omega-cm, respectively. Transmission electron microscope (TEM) analysis revealed that all of the as-annealed films were in the form of an oxygen-deficient oxide/metal composite with layered structure. The resistivity of these oxides is lower than that of indium tin oxide (ITO). They represent a new category of low-resistivity oxides. |
| 顯示於類別: | [化學工程與材料工程學系暨碩士班] 期刊論文
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