CuCr1-xNixO2 thin films prepared by chemical solution deposition

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题名:	CuCr1-xNixO2 thin films prepared by chemical solution deposition
作者:	Lin, YH (Lin, Yi-Han) Yu, BS (Yu, Bing-Shen) Lei, CM (Lei, Chien-Ming) Fu, Y (Fu, Yongsheng) Park, JH (Park, Joon-Hyeong) Chiu, TW (Chiu, Te-Wei)
贡献者:	化學工程與材料工程學系暨奈米材料研究所]
关键词:	ELECTRICAL-PROPERTIES NICKEL-OXIDE CUCRO2 PROPERTY PERFORMANCE CUALO2
日期:	2018-08-30
上传时间:	2019-01-16 16:14:50 (UTC+8)
摘要:	CuCr1-xNixO2, (0.0 <= x <= 0.4) thin films were prepared on non-alkali glass substrates by chemical solution deposition. The effects of Ni content in CuCr1-xNixO2 thin films on the microstructural, optical, electrical, and magnetic properties were investigated. X-ray diffraction analysis revealed that all the samples presented the delafossite structure. The transmittance of the CuCr1-xNixO2 thin films was above 60% in the visible region, and the band gap was between 3.02 and 3.17 eV. It was found that the electrical resistance was decreased by increasing doping amount of Ni2+ ions. The lowest resistivity with relatively high carrier concentration was obtained in CuCr0.6Ni0.4O2 thin films. The experimental results imply that it is possible to get higher electrical conductivity of p-type transparent conducting oxides from CuCrO2 via doping with divalent ions.
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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