在本文中，我們提出一個包含有七個步驟的化學機械研磨(CMP)機制，並以化學動力學的方法論而推導出研磨速率方程式。本文所提的研磨機制是針對氧化矽層的化學機械研磨，並且將研磨墊視為研磨反應中的觸媒，進而透過觸媒動力學的反應速率方程式的推導技巧，而得到研磨速率方程式。此外，在使用文獻上的數據分析後，我們認為本文所提的氧化矽層化學機械研磨機制應可作為半經驗式研磨速率方程式的理論基礎，但仍有更複雜的公式待往後的推導。
In this article, a chemical kinetics method of a seven-step chemical mechanism was proposed to deduce a chemical-kinetics-based polishing rate equation for oxide chemical mechanical polishing (CMP). Some experimental data in the literature were used to verify the mechanism and polishing rate equation successfully. The major achievement is that the mechanism includes the pad effect. A pad used in CMP is considered a catalyst. Using the present method can bring more chemical ways to explain oxide chemical mechanical polishing.
關聯:
Journal of the Chinese Institute of Chemical Engineers 37:4 民95.07 頁401-405
