文化大學機構典藏 CCUR:Item 987654321/30870
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    Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/30870


    Title: The Microstructures and Electrical Resistivity of (Al, Cr, Ti)FeCoNiOx High-Entropy Alloy Oxide Thin Films
    Authors: Tsau, Chun-Huei
    Hwang, Zhang-Yan
    Chen, Swe-Kai
    Contributors: Grad Sch Nanomat
    Keywords: MECHANICAL-BEHAVIOR
    ELEMENTS
    Date: 2015
    Issue Date: 2015-11-03 16:31:03 (UTC+8)
    Abstract: The (Al, Cr, Ti)FeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 mu Omega-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.
    Relation: ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, Volume 2015 (2015), Article ID 353140, 6 pages
    Appears in Collections:[Department of Chemical & Materials Engineering] journal articles

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