文化大學機構典藏 CCUR:Item 987654321/2991
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 47225/51091 (92%)
Visitors : 13980759      Online Users : 254
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: https://irlib.pccu.edu.tw/handle/987654321/2991


    Title: H2S sensing properties of noble metal doped WO3 thin film sensor fabricated by micromachining
    Authors: Tao WH
    Tsai CH
    Contributors: 化工系
    Keywords: H2S gas sensor
    MEMS technology
    tungsten oxide
    sputtering
    Date: 2002
    Issue Date: 2009-12-11 10:11:43 (UTC+8)
    Abstract: The purpose of this research is to develop a semiconductor-type H2S gas sensor with silicon-based microfabrication and micromachining technology. This successful approach allows for the production of small, geometrically well-defined sensors that are reliable and mechanically robust, and is compatible with VLSI processes. Individual sensor cost is also greatly reduced because the sensors are batch fabricated. The main sensing region is covered with a 300 mum x 300 mum. WO3 thin film, which is deposited by RF sputtering on silicon wafer substrate. Platinum (Pt), gold (Au) or Au-Pt noble metals was then deposited onto WO3 thin film as activator layer by sputtering. Under 1 ppm H2S and at an operating temperature of 220 degreesC, the individual sensitivities of the Pt and the Au-Pt doped WO3 gas sensors are 23 and 5.5, respectively. The sensor response times of Pt, Au-Pt and Au doped WO3 thin films are 30, 2 and 8 s, respectively, and the recovery times are about 30, 30 and 160 s, respectively. The results show that the Pt doped WO3 gas sensor exhibits acceptable response time, recovery time and as well as a high sensitivity. (C) 2002 Elsevier Science B.V All rights reserved.
    Relation: SENSORS AND ACTUATORS B-CHEMICAL Volume: 81 Issue: 2-3 Pages: 237-247
    Appears in Collections:[Department of Chemical & Materials Engineering] journal articles

    Files in This Item:

    File Description SizeFormat
    index.html0KbText612View/Open


    All items in CCUR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback