Interfacial adhesion and microstructure of thick film metallized aluminum nitride substrates

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/2990

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题名:	Interfacial adhesion and microstructure of thick film metallized aluminum nitride substrates
作者:	Tsai CJ Tseng WJ Hsi CS
贡献者:	材料所
关键词:	interfaces fracture AlN thick film metallization
日期:	2002
上传时间:	2009-12-11 10:08:27 (UTC+8)
摘要:	The adhesive strength and fractured microstructure of aluminum nitride (AIN) substrate metallized with resistor thick-films followed by firing at 850 degreesC have been investigated via a pull-out rupture test loaded in tension. The AIN substrate used includes the as-received form and an oxidized form that was thermally treated at 1450 degreesC prior to the metallization. The thick-film paste includes both the as-received form (which is an RuO2-based resistor) and a mixture of the paste with varying fractions of sub-micrometer alumina powder (5-20 wt.%) for comparison purposes. When the as-received AIN is used as the substrate, rupture strength decreases monotonically from 1.2 to similar to0.1 MPa as the alumina loading (in the film) increased from 0 to 20 wt.%. The strength, however, remains relatively constant (similar to0.5 MPa) for the pre-oxidized AIN case, i.e. the adhesion is found insensitive to the change of alumina loading. This strength dependency has been compared with their fractured microstructure and the possible fracture mechanism that caused the failure is discussed. (C) 2002 Elsevier Science Ltd and Techna S.r.l. All rights reserved.
關聯:	CERAMICS INTERNATIONAL Volume: 28 Issue: 1 Pages: 23-28
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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