五氧化二釩奈米結構摻雜鋁、鎵之光電特性研究

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Title:	五氧化二釩奈米結構摻雜鋁、鎵之光電特性研究 Optoelectronic Property Studies on the Aluminum;Gallium Doped V2O5 Nanostructures
Authors:	呂佳倫 Lu, Chia-Lun
Contributors:	化學工程與材料工程學系奈米材料碩士班
Keywords:	光電特性氧化釩摻雜鋁摻雜鎵奈米結構 optoelectronic property vanadium oxide doped aluminum doped gallium nanostructures
Date:	2014-12-12
Issue Date:	2015-02-05 14:33:52 (UTC+8)
Abstract:	本次研究採用水平式爐管，以氣-固機制成長五氧化二釩奈米結構，並在五氧化二釩粉末中分別摻入鋁和鎵作為蒸鍍源，成功合成出摻雜鋁和摻雜鎵的奈米結構。用場發射掃描式電子顯微鏡(FESEM)觀察其結構，可以看到合成出的奈米形貌，其寬度大約在60-200 nm，長度大約數個µm；再利用高解析穿透式電子顯微鏡(HRTEM)以及選區繞射(SAD)圖形確認五氧化二釩為單晶結構，並定義其晶面方向以及成長方向為[110]；更利用X光繞射儀(XRD)、X光電子能譜術(XPS)以及拉曼光譜(Raman)，對其結構、成分和化學態做進一步的分析。除此之外，我們利用光激發光譜(PL)對奈米結構在分別摻雜鋁或鎵後的變化，摻雜鋁之後的五氧化二釩奈米結構的發光位置，從原本的670 nm藍移至650 nm，而摻雜鎵的奈米結構，也從原本的670 nm 藍移至655 nm。電性量測方面，我們得知摻雜鋁的電性優於摻雜鎵後的奈米結構。 In this study, we have successfully used thermal evaporation to fabricate V2O5, Al-doped V2O5 and Ga-doped V2O5 nanostructures on silicon substrate by the VS (Vapor-Solid) mechanism. The relevant properties were characterized by XRD, XPS and micro-Raman spectroscopy. V2O5 products were in form of nanowires with the dimension of 60-200 nm thick and several micrometers long. And (FESEM) showed that they were single-crystalline with a growth direction of [110]. The result of PL performance indicated: The pure V2O5 nanostructures exhibited an emission at 670 nm, however, both Al-doped V2O5 and Ga-doped V2O5 nanostructures would lead to a blue-shift, respectively, to 650 nm and to 655 nm. The electrical properties measured indicated that the conductance of Al-doped V2O5 nanostructures is better than that of Ga-doped V2O5.
Appears in Collections:	[Department of Chemical & Materials Engineering] thesis

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