本實驗成功利用熱蒸鍍法合成出氧化鎵奈米線、氧化鎵奈米帶以及摻雜錫之氧化鎵奈米線與奈米帶四種結構。我們透過場發射掃描式電子顯微鏡(FESEM)觀察其表面形貌，再使用穿透式電子顯微鏡(TEM)以及X光繞射分析儀(XRD)分析其晶體結構和成長方向，可以發現微量摻雜錫元素並不影響主體氧化鎵的結構。而使用X光光電子能譜儀(XPS)作成分的鑑定，證明氧化鎵奈米線與奈米帶內部確實有錫摻雜。
最後以光致激發光譜儀(PL)與電流-電壓(I-V)曲線的量測作光電性質上的分析，發現氧化鎵奈米線與奈米帶的PL發光位置上有藍移現象，再次證實兩種結構內部皆有錫的摻雜。而在電性量測結果上我們得知透過錫的摻雜，可以有效提升氧化鎵的導電特性，無論是奈米線或是奈米帶，均能使氧化鎵產生有導體的蕭特基接觸特性。
In this study, gallium oxide nanowires, gallium oxide nanoribbon, Sn-doped Ga2O3 nanowires and Sn-doped Ga2O3 nanoribbon have been successfully synthesized by thermal evaporation. Using field emission scanning electron microscope (FESEM) to observe the surface morphology, and using transmission electron microscopy (TEM) and x-ray diffraction (XRD) to analyze the crystal structure and growth direction,we found that the main structure of gallium oxide hardly changed when slight tin was doped in. The use of x-ray photoelectron spectroscopy (XPS) for the materials identification, can prove that the gallium oxide nanostructures are within the tin doping limit,up to 10% Sn.
Photoluminescence (PL) and current - voltage (IV) curve for the measurement of optoelectronic properties of the analysis, both Sn-doped Ga2O3 nanowires and Sn-doped Ga2O3 nanoribbon showed a blue shift in the PL spectrum, and once again confirming that gallium oxide nanowires and gallium oxide nanoribbon have been doped with tin. The resulting electrical measurements showed that the conductivity of Sn-doped gallium oxide nanostructures is the best among the pure gallium oxide nanostructures, and the connection between Ga2O3 and Ag electrode were Schottky contact.
