在半導體工業中，影響低壓化學氣相沈積製程薄膜厚度與均一性的因素很多，但最主要的影響因素是晶圓溫度，由於在加熱過程中無法直接量測放置於爐管內的晶圓溫度，因此建立一套準確的溫度預測模型有其必要性。本文以形狀因子做為熱輻射計算的基礎，建立穩態溫度預測模式，此模式除了避免微分方程而利用代數方程式進行預測溫度計算外，並且考量到二維的溫度預測，對於實際半導體製程取得均一性的數據分析會有相當大的助益，另外並針對每一個加熱區對每一片晶圓進行靈敏度分析。
In the semiconductor industry, there are many factors which can affect the thickness and uniformity in the low pressure chemical vapor deposition process. The wafer temperature is the main one. Because the wafer temperature in the heating process is not readily measured, it is necessary to build an exact temperature prediction model. In this study, the configuration factors are used as the bases of thermal radiation to build the steady-state wafer temperature prediction model. The proposed prediction model is in algebraic form which can be applied more easily than the differential form model presented in the literature. Two-dimensional wafer temperature distribution is considered in this model for checking uniformity data from a real process. For each wafer, the sensitivity analysis has also been considered for each heating zone.
