此研究以矽晶片經陽極電化學以及逆向偏壓蝕刻後，表面多孔矽層之分析。實驗中以掃瞄式電子顯微鏡觀察其結構及深度，再利用掃描式光激發光光譜儀檢測不同參數下之強度與波長。因為p型矽晶片電洞多的特性，在蝕刻時外加一逆向偏壓，藉此達到控制蝕刻劇烈與緩和的方式，使島塊形成減少，並且增加其平坦度以及均勻性。此方法可以使p型矽晶片有著類似n型矽晶片一般的平坦表面，且其價格卻較為便宜，整體實驗時間亦快速許多。
This research by the silicon chip with electrochemical anodization and reversion bias etching, The experiments including film thickness and properties of fabricated surface porous silicon were measured. Through different etching-parameter, and measured by SEM measurement. For clarifying this structure, photoluminescence characteristics which including wavelength and intensity for different etching-parameter were measured by Maple-PL. Because p-type silicon with features of electron holes. By electrochemical anodization and reversion bias etching to control experimental response. When reduce the island could increase luminous life. This way can make the p-type silicon has flat surface just like n-type silicon, and more cheaper than n-type silicon ,and saving more time.
