A better technique using multisegment modeling and analysis of high-density and high-speed connectors

文化大學機構典藏 CCUR > 理工學院 > 工學院 > 化學工程與材料工程學系暨碩士班 > 期刊論文 > Item 987654321/2809

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题名:	A better technique using multisegment modeling and analysis of high-density and high-speed connectors
作者:	Kao CH Tseng CC Lee FM Lai MF
贡献者:	材料所
关键词:	connectors digital visual interface (DVI) modeling multiply segmented and lumped coupled model near-end cross-talk (NEXT) peripheral component interconnection (PCI) express time-domain reflection (TDR)
日期:	2006
上传时间:	2009-11-20 15:38:06 (UTC+8)
摘要:	A useful and rather new simulation technique for connectors up to 6.25 GHz is presented and discussed in this paper. The proposed model extracts electrical parameters of a connector using time-domain reflectometry (TDR) measurements. A new technique was developed to obtain accurate impedance profiles using TDR and a multisegment approach that is effectively a distributed coupled model. The parameter extraction and characterization of connectors are discussed. The performance of the proposed segmented transmission line model is verified by simulation of the model in SPICE and by experimental measurement. The results show that the proposed model can simulate the electrical characteristics, including crosstalk and impedance, of high-density and high-speed connectors with satisfactory accuracy. Based on the proposed modeling and CAD simulators, the design and analysis of complicated high-density and high-speed connectors can be executed accurately and effectively. Compared with other previous models, the proposed model can significantly improve the accuracy of simulation.
關聯:	IEEE TRANSACTIONS ON ADVANCED PACKAGING Volume: 29 Issue: 1 Pages: 140-148
显示于类别:	[化學工程與材料工程學系暨碩士班] 期刊論文

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